论文部分内容阅读
据报道,日本电气通信大学发表了采用GaN HEMT器件制作的多尔蒂功率放大器。该功率放大器在1.9 GHz下,饱和输出功率31 dBm,功率附加效率(PAE)为58%。输入补偿10 dB时,获得24 dBm的输出功率和PAE31%良好的
It is reported that Japan Electric Communication University published a Doherty power amplifier made of GaN HEMT devices. The power amplifier at 31 GHz, the saturation output power of 31 dBm, the power added efficiency (PAE) of 58%. Gain 24 dBm output power and PAE31% good at 10 dB input compensation