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本文报导0.6～5MeV高能Si~+离子注入LEC半绝缘GaAs的快速退火效果,在950℃温度下退火5秒得到最佳电特性.采用多能量叠加注入已制备出平均深度在1.2μm,厚约1.7μm的n~+深埋层,载流子浓度为3～5×10~(17)cm~(-3).在近表面单晶层上作成了性能良好的肖特基接触,其势垒高度约为0.7V.
In this paper, the rapid annealing of semi-insulating GaAs implanted with 0.6 ~ 5 MeV high energy Si ~ + ion implanted LECs was reported, and the best electrical properties were obtained by annealing at 950 ℃ for 5 s.The average depth was 1.2μm, The buried layer with n ~ + depth of 1.7μm has carrier concentration of 3 ~ 5 × 10 ~ (17) cm ~ (-3) .The Schottky contacts with good properties are formed on the near-surface single- The barrier height is about 0.7V.