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该文采用原子力显微镜观察了ＹＳＺ／Ｓｉ上磁控溅射ＢＳＣＣＯ高温超导薄膜退火中的分形区域，计算了不同退火温度下的分形维数。在未经退火，退火温度低于１５０℃或高于８００℃时都不产生分形，２００℃和４５０℃退火时分别产生分维为１．７１和１．７９的分形。在研究分形现象，并分析透射电子衍射圈（ＴＥＤ）后，提出在超导膜的晶化中同时存在扩散控制晶化和成核生长晶化两种机制，并且超导膜分形的产生与超导转变有着密切的联系。
Atomic force microscopy was used to observe the fractal dimension of the annealed BSCCO high-temperature superconducting thin films deposited on YSZ / Si by magnetron sputtering. The fractal dimensions were calculated at different annealing temperatures. The fractal did not occur when the annealing temperature was lower than 150 ° C or higher than 800 ° C, and fractal dimensions 1.71 and 1.79 respectively when annealed at 200 ° C and 450 ° C. After studying the fractal phenomenon and analyzing the transmission electron diffraction (TED), two mechanisms of diffusion controlled crystallization and nucleation and growth crystallization are proposed in the crystallization of superconducting films. Guidance change has a close relationship.