RTHEMT相关论文
ＩｎＰ基谐振隧道ＨＥＭＴ（ＲＴＨＥＭＴ）倍频器最近，日本ＮＴＴ实验室报道了一种采用简单电路的室温工作的倍频器，这种电路由负载电阻器和谐振隧道ＨＥＭＴ组成。ＲＴＨＥＭＴ是将ＩｎＧａＡｓ／ＡｌＡｓ／ＩｎＡｓ赝配谐振隧......
Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a
For the first time,we have introduced a novel GaN based resonant tunneling high electron mobility transistor(RTHEMT) on ......
