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Investigation of time domain characteristics of negative capacitance FinFET by pulse-train approache
The HfO2-based ferroelectric field effect transistors(FeFET)have been widely studied for their ability in breaking the B......
近年来,随着晶体管的尺寸不断减小,短沟道效应的日益加重使得硅基器件的速度和功耗逼近了物理极限,因此需要寻找新型的沟道材料,以......
