Emitt相关论文
Light emitting devices based on Si nanoclusters:the integration with a photonic crystal and electrol
We present the properties and potentialities of light emitting devices based on amorphous Si nanoclusters. Amorphousnano......
Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type Ga
We demonstrate the improvement of the electrostatic discharge(ESD) characteristic of GaN-based blue light-emitting diode......
Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocki
The light output power of an InGaN/GaN light-emitting diode is improved by using a SiO_2/TiO_2 distributed Bragg reflect......
Silicon-germanium(SiGe) hetero-junction bipolar transistor current transients induced by pulse laser and heav.y iron are......
The preparation process, structure feature and field electron emission characteristic of diamond films on nanocyrstallin......
Emitting stability of poly(9,9-dialkylfluorene-co-N-butylcarbazole) by solid-state oxidative couplin
Dihexylfluorene and N-butylcarbazole were copolymerized by solid-state oxidative coupling polymerization in the presence......
利用TCAD半导体器件仿真软件对中低倍聚光光伏系统中应用的N型叉指背接触（IBC）单晶硅太阳电池的电学性能进行了仿真研究。全面系统地......
用分子束外延技术在半绝缘GaAs衬底上生长了三种不同材料结构的RTD。主要针对阱结构进行了对比设计,然后对设计结构进行了常温下的......
在模拟直线感应加速器电子束输运过程中,为了正确设置注入器电子束参数,以注发射模型为基础,研发了可设置发射度、能散和电子束倾......
