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采用离子束辅助沉积法(IBAD)在单晶硅片上制备了Ti-Si-N纳米复合薄膜,研究了轰击能量大小对Ti-Si-N纳米复合薄膜生长及力学性能的影响,同时探讨了轰击能量对Ti-Si-N纳米复合薄膜的生长机理的影响。通过原子力显微镜(AFM)、纳米压入仪、光电子能谱(XPS)和X射线衍射分析(XRD)等现代分析技术,对Ti-Si-N纳米复合薄膜的晶粒大小、力学性能、成分与相结构进行综合表征分析。试验结果表明:当轰击能量为700eV时,Ti-Si-N薄膜晶粒直径达到了最小值11nm,此时Ti-Si-N薄膜的硬度相对最高,为33GPa。
Ti-Si-N nanocomposite films were prepared on single crystal silicon wafers by ion beam assisted deposition (IBAD). The effects of bombardment energy on the growth and mechanical properties of Ti-Si-N nanocomposite films were investigated. Effect of bombardment energy on the growth mechanism of Ti-Si-N nanocomposite films. The crystal size, mechanical properties, composition and mechanical properties of Ti-Si-N nanocomposite films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM) Phase structure of a comprehensive characterization analysis. The results show that when the bombardment energy is 700 eV, the grain size of Ti-Si-N thin film reaches the minimum of 11 nm, and the hardness of Ti-Si-N thin film is the highest at 33 GPa.