激光退火可以使离子注入半导体的损伤层再结晶,从而获得完整的单晶结构,引起了人们很大的重视.是否可以采用激光退火来控制半导体单晶中的缺陷呢?已报道的结果表明,激光退火可以消除硅单晶中的位错,在某些条件下,由于应力的作用,激光辐照又会引入位错.所以,研究各种缺陷在激光退火中的表现,对了解这些缺陷的退火性质,从而进行有效的控制是重要的. Laser annealing can make the damaged layer of ion implanted semiconductor recrystallization, so as to obtain a complete single crystal structure, has aroused great attention.Is it possible to use laser annealing to control the defects in the semiconductor single crystal? Reported results show that, Laser annealing can eliminate dislocations in silicon single crystals, and under certain conditions, laser irradiation introduces dislocations due to stress, so we study the performance of various defects in laser annealing, It is important that the nature of the annealing be controlled effectively.