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本文采用１．３μｍＨｅ－Ｎｅ激光或ＩｎＧａＡｓＰ／ＩｎＰ半导体激光作探针，实时、无损地测量硅半导体器件中的自由载流子浓度的变化．从理论上分析了器件内自由载流子浓度变化引起的折射率改变及由此产生的光相位调制．它适用干硅和砷化镓材料的电子和光电子器件．本方法也显示了在测量集成电路内部有源器件特性方面的潜在应用前景．
In this paper, a 1.3μm He-Ne laser or InGaAsP / InP semiconductor laser is used as a probe to measure the change of free carrier concentration in silicon semiconductor devices in real time and nondestructively. The change of refractive index caused by the change of free carrier concentration in the device and the optical phase modulation resulting from it are theoretically analyzed. It is suitable for dry silicon and gallium arsenide materials, electronic and optoelectronic devices. This method also shows the potential application in measuring the characteristics of active devices inside an integrated circuit.