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THz波段位于微波与红外之间 ,该波段电磁波与物质的相互作用是一个崭新的研究领域 .应用THz时域光谱技术研究了两种重要的单晶基片材料 (1 0 0 )MgO和 (1 0 0 )LaAlO3的THz光谱 .在 0 2— 2THz频率范围 ,得到这两种材料在THz波段的光学参数 .结果表明 ,在THz波段MgO基片材料的折射率 n和介电系数 ε不随频率的变化而变化 ,而LaAlO3基片材料的折射率和介电系数随着频率的增加而略有增加 .在 1THz频率处 ,测得MgO的复折射率 n =3 4 6+i0 0 0 1 ,复介电系数 ε =1 2 2 7+i0 0 6 ;LaAlO3的复折射率 n =4 78+i0 0 2 ,复介电系数 ε =2 2 5 +i0 2 在THz波段 ,LaAlO3基片的介电损耗tanδ约为MgO的 5倍 ,且两者的介电损耗值均小于 0 0 1 ,说明MgO和LaAlO3材料作为高温超导器件基片材料可以工作于THz波段
The THz band is located between the microwave and the infrared, and the interaction between the electromagnetic wave and the material in this band is a brand new field of research.Two important single crystal substrate materials (100) MgO and (1 0 0) THz spectra of LaAlO3.The optical parameters of these two materials in the THz band were obtained in the frequency range of 0 2 ~ 2 THz.The results show that the refractive index n and the dielectric constant ε of the MgO substrate in the THz band do not vary with the frequency , While the refractive index and dielectric constant of LaAlO3 substrate material increase slightly with the increase of the frequency.The complex refractive index of MgO is measured at 1THz frequency n = 3416 + i0 0 0 1, Dielectric coefficient ε = 1 2 2 7 + i0 0 6; LaAlO3 birefringence n = 4 78 + i0 0 2, complex dielectric coefficient ε = 2 2 5 + i0 2 In the THz band, the dielectric constant of the LaAlO3 substrate Loss tanδ is about 5 times that of MgO, and the dielectric loss values of both are less than 0 0 1, indicating that MgO and LaAlO3 materials can work in the THz band as high temperature superconducting device substrate material