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已在小信号和大信号区实验研究了具有渡越时间负阻的穿通注入二极管的微波性能。所研究的特定器件是硅p~+-n-p~+,M-n-p~+和p+-v-n-p~+结构。宽范围的小信号导纳测量指出,这些器件的负电导主要来自载流子近乎饱和速度的渡越时间延迟。但是观测到的最小负Q值和器件导纳随频率的变化并不与最简单的渡越时间分析一致。器件导纳的温度依赖性主要归因于载流子速度——电场关系随温度的相应变化。M-n-p~+结构肖特基势垒发射极的注入性能使这种器件比同类p~+-n-p~+结构有较大的温度灵敏度。作成自由振荡器的器件性能的比较指出,增加n区杂质浓度可以进一步增加输出功率。由于一种大信号效应,器件在频率低于小信号负阻的最小频率下有显著的功率输出。从调谐放大器实验得到了器件导纳和偏置整流对射频电压的详细测量结果。最大的Pf~2乘积由一个p~+-v-n-p~+结构达到,它在6.3千兆赫产生115毫瓦。
The microwave performance of a punch-through diode with a transit time negative resistance has been experimentally investigated in small and large signal areas. The specific devices studied are the silicon p ~ + -n-p ~ +, M-n-p ~ + and p + -v-n-p ~ + structures. A wide range of small-signal admittance measurements indicate that the negative conductance of these devices is primarily due to the transit time delay of carriers near saturation speed. However, the observed minimum negative Q and device admittance change with frequency are not consistent with the simplest time-of-flight analysis. The temperature dependence of the admittance of the device is mainly due to the corresponding change of the carrier-temperature-electric-field relationship with temperature. The injection performance of the M-n-p ~ + structure Schottky barrier emitter makes this device have a greater temperature sensitivity than similar p ~ + -n-p ~ + structure. A comparison of device performance as a free-running oscillator shows that increasing the n-region impurity concentration can further increase the output power. Due to a large signal effect, the device has significant power output at the minimum frequency at which the frequency is below the negative resistance of the small signal. From the tuned amplifier experiments, the detailed measurement results of RF admittance and bias rectification were obtained. The largest Pf ~ 2 product is achieved by a p ~ + -v-n-p ~ + structure that produces 115 milliwatts at 6.3 GHz.