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场效应晶体管输入电容低频振荡与沟道掺杂分布的关系＝［刊．俄］／－１９９３．２２（２）．－１５～１９肖特基势垒场效应晶体管广泛地用于一系列较高强度低频振荡设备之中。基本上有如下三种主要途径来改善肖特基势垒场效应晶体管器件的超高频噪声特性；１）使这些器件...
The relationship between low frequency oscillation of field effect transistor input capacitor and channel doping distribution = []. Russian] / - 1993.22 (2). -15 ~ 19 Schottky barrier field effect transistors are widely used in a range of higher intensity, low frequency oscillating devices. There are basically three main ways to improve the ultra-high frequency noise characteristics of Schottky barrier field-effect transistor devices; 1) to make these devices ...