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本文报道了用微波等离子体化学气相淀积(MP—CVD)技术从 SiH_4+H(?)进行 a-Si∶H 薄膜的高速淀积研究。对淀积参数对淀积行为的影响、淀积膜的结构性能也进行了研究。研究表明,在保证材料具有一定质量的前提下,用该技术能达到高达30μm/h 的淀积速率,且淀积效率达到近100%。
This paper reports the high-speed deposition of a-Si: H thin films from SiH 4 + H (?) By microwave plasma chemical vapor deposition (MP-CVD) The effect of deposition parameters on the deposition behavior and the structural properties of deposited films were also investigated. The research shows that the deposition rate of up to 30μm / h can be achieved with the deposition efficiency up to nearly 100% while ensuring the quality of the material.