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随着金属氧化物半导体场效应管(metal-oxide-semiconductor field-effect transistors,MOSFETs)等比缩小迈向45nm技术节点,金属栅极已应用于新型MOSFET器件,改善了与高k栅介质的兼容性,并消除了传统多晶硅栅极的栅耗尽及硼穿透等效应.文章综述了pMOS器件金属栅极材料的发展历程、面临的主要问题以及未来的研究趋势等.
As metal-oxide-semiconductor field-effect transistors (MOSFETs) shrink down to 45nm technology nodes, metal gates have been used in new MOSFET devices to improve compatibility with high-k gate dielectrics And eliminates the gate depletion and boron penetration of the conventional polysilicon gate.The article reviewed the development of the metal gate material of pMOS device, the main problems faced and the future research trends.