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精确测量P—N结的深度,在杂质扩散过程的研究和器件制造工艺上是一项重要的工作。对于硅的扩散P—N结的深度,一般以采用磨角、染色或镀铜显示P—N结的位置后,再用干涉仪进行测量为最准确。该法要求在已经显示出结位置的硅片上有镜面光亮的表面,才能观察到干涉条纹。本文提出一种新的染色法,它能够在镜面光亮的硅片表面上,准确地显示出单P—N结和双P—N结的位置,而不损坏进行干涉显微镜测量所必需的表面条件。
Accurately measuring the depth of the P-N junction is an important task in the research of impurity diffusion process and device manufacturing process. For the depth of silicon diffusion P-N junction, the general use of grinding angle, dyeing or copper plating shows the location of the P-N junction, and then measured by the interferometer for the most accurate. The law requires speckled surfaces on wafers that have shown junction locations to observe interference fringes. This paper presents a new dyeing method that accurately displays the position of single P-N junctions and double P-N junctions on specularly bright silicon surfaces without compromising the surface conditions necessary for interferometric microscopy .