在有效质量近似下,研究了应变纤锌矿GaN/AlxGa1-xN柱形量子点中基态与第一激发态波函数、能级和导带内的子带光吸收及其压力效应,数值计算了光吸收系数随量子点尺寸、组分和光照强度的变化,讨论了流体静压力对光吸收的影响.结果表明:随着量子点尺寸的减小和组分的增加子带跃迁吸收峰升高且发生蓝移;GaN/AlxGa1-xN量子点子带跃迁产生的吸收峰值会随流体静压力的减小而增加且发生红移. In the approximation of the effective mass, the ground state and first excited state wave functions, the absorption bands and the pressure effects in the energy level and conduction band of GaN / AlxGa1-xN QDs in strained wurtzite were calculated. The influence of hydrostatic pressure on the optical absorption was discussed with the variation of quantum dot size, composition and light intensity.The results show that with the decrease of quantum dot size and the increase of component, the absorption peak of the subband transition increases And blue shift occurs. The absorption peak due to GaN / AlxGa1-xN quantum dot subband transition increases with the decrease of hydrostatic pressure and redshifts.