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测量了GD a-Si:H/n-c-Si异质结的高频C-V特性,由平带电压的偏移,计算了有效表面电荷和表面态密度,应用突变异质结能带模型对结果作了分析.
The high-frequency CV characteristics of GD a-Si: H / nc-Si heterojunction were measured. The effective surface charge and surface density of states were calculated from the shift of the flat band voltage. Analysis.