论文部分内容阅读
铜引线键合在集成电路封装工业中得到了越来越多的应用。在铜引线键合中,采用压力两级加载的方式能够减少硅基板的损坏,但其机理目前还不清楚。该文建立了3D非线性有限元模型来模拟铜引线键合过程,比较了常规加载和两级加载方式中的硅基板受力状态。结果表明:超声功率相同且铜球变形相同时,两级加载方式中基板承受的压应力大于常规加载方式,拉应力两者相近,而剪应力则小于常规加载方式。不同加载方式下的基板受力分析为找出两级加载方式减少基板缺陷的作用机理提供了依据。
Copper wire bonding in the integrated circuit packaging industry has been more and more applications. In the copper wire bonding, the use of pressure two-stage loading can reduce the damage of the silicon substrate, but the mechanism is not yet clear. This paper established a 3D nonlinear finite element model to simulate the copper wire bonding process and compared the stress state of the silicon substrate in conventional loading and two-stage loading. The results show that when the ultrasonic power is the same and the deformation of the copper ball is the same, the compressive stress on the substrate in the two-stage loading method is larger than that in the conventional loading method. The tensile stress is similar to that of the conventional loading method, but the shear stress is smaller than that of the conventional loading method. The analysis of substrate stress under different loading methods provides the basis for finding out the mechanism of the two-stage loading method to reduce substrate defects.