对用快速热合金方法(RTP)形成Ge/Pt/Au,Ge/Au/Ni/Au—n型GaAs的欧姆接触进行了对比研究。实级结果表明,在合金形貌和欧姆接触特性兼顾的情况下,Ge/Pt/Au和Ge/Au/Ni/Au有不同的“温度—时间”窗口和接触电阻率。合金后,Auger能谱分析表明,Ge/Au/Ni/Au金属系统扩散进GaAs体内的净施主Ge浓度较高,因而接触电阻率较低。两种欧姆接触金属系统经高温存贮一定时间后,发现其接触电阻率都有所降低。 The ohmic contact of Ge / Pt / Au, Ge / Au / Ni / Au-n type GaAs deposited by rapid thermal method (RTP) was studied. The real-level results show that Ge / Pt / Au and Ge / Au / Ni / Au have different “temperature-time” windows and contact resistivities with both the morphology of the alloy and the ohmic contact characteristics. Auger spectrum analysis showed that the Ge / Au / Ni / Au metal system diffused into the GaAs body, the net donor concentration of Ge was higher and the contact resistivity was lower. After two ohmic contact metal system is stored at high temperature for a certain period of time, it is found that the contact resistivity is reduced.