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利用辉光放电方法制成两种在国内外迄今未见报道的非晶半导体多层结构,即分别以超薄层a-Si:H/a-C:H和μc-Si:H/a-Si:H作为重复单元的多周期重复结构.样品的断面透射电镜分析显示了明晰的层间界面状况以及各子层的平整性和均匀性.由光吸收测量观察到a-Si:H/a-C:H结构中a-Si:H吸收边的“兰移”,将此现象归结为量子尺寸效应.
Two kinds of amorphous semiconductor multilayer structures which have not been reported at home and abroad have been made by the glow discharge method. That is to say, two kinds of amorphous semiconductor multilayer structures a-Si: H / aC: H and μc-Si: H / H as a repeating unit of the multi-period repeat structure of the sample cross-section transmission electron microscopy showed a clear interfacial interface conditions and the sub-layer formation and uniformity of light absorption measurements observed a-Si: H / aC: H Structure “a-Si: H absorption edge of the” blue shift ", this phenomenon boils down to the quantum size effect.