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本文评述了由于分凝现象和扩散过程的存在,热氧化时硅中硼杂质的各种再分布情况。特别讨论了二步扩散中硼杂质再分布几个模型的比较及应用。
This paper reviews the various redistributions of boron impurities in silicon during thermal oxidation due to the segregation phenomena and the diffusion process. In particular, the comparison and application of several models of boron impurity redistribution in two-step diffusion are discussed.