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研究成功一种脉冲低场电阻测温法,测量了体效应放大器件的有源区温度,计算了器件的热阻。测量装置比较简单,结果比较准确,测量的相对重复误差<10%。进行了降低器件热阻的初步研究,最低热阻 R_(th)<15℃/W,保证了 T51、T52型体效应微波宽带功率放大管的鉴定。最后给出了器件和部件的典型温度特性,满足了 WTF631和 WTF731两种微波宽带体效应功率放大器的产品定型要求。
A pulsed low-field resistance thermometry was successfully investigated. The temperature of the active region of the body-effect amplifier was measured and the thermal resistance of the device was calculated. Measuring device is relatively simple, the result is more accurate, the relative error of the measurement of <10%. A preliminary study on reducing the thermal resistance of the device was carried out. The lowest thermal resistance R_ (th) <15 ℃ / W was achieved to ensure the identification of T51 and T52 bulk effect microwave broadband power amplifier tubes. Finally, the typical temperature characteristics of the devices and components are given and the product shaping requirements of two microwave broadband body-effect power amplifiers of WTF631 and WTF731 are met.