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GLOBALFOUNDRIES(GF)计划推出一款全新的12nm领先性能(ILLP)FinFET(鳍式场效应晶体管)半导体制造工艺,该技术有望为GF当代的14nm Finfet产品提供更好的密度和性能提升,满足从人工智能和虚拟现实到高端智能手机和网络基础设施的最苛刻的计算密集型应用的处理要求。该新的12LP技术在电路密度方面提供了15%的提
GLOBALFOUNDRIES (GF) plans to introduce a new 12nm Leading Performance (ILLP) FinFET (FinFET) semiconductor manufacturing process that is expected to provide better density and performance enhancements for GF’s contemporary 14nm Finfet products, Smart and virtual reality to the most demanding compute-intensive applications in high-end smartphones and network infrastructures. The new 12LP technology provides a 15% improvement in circuit density