美国帕金,艾尔默公司继研制成功140型投影曝光机之后,最近又研制成功200型1:1投影曝光机,从而使能够制出的最小线宽由3微米提高到2微米乃至更小的数量级。该设备具有自动对准及自动装载片子系统,自动对准精度为0.25微米,畸变误差为0.25微米,照明均匀性误差为4％。同上一代的140型机一样,该系统依然系用一套1:1光学投影系统。在曝光过程中,掩模图形被以一次扫描的方式快速地复印在涂有光致抗蚀剂的硅片上。在通常情 American Parkin, Elmer company following the successful development of 140 projection exposure machine, recently developed a 200 1: 1 projection exposure machine, so that the minimum line width can be made from 3 microns to 2 microns or even smaller The order of magnitude. The device has automatic alignment and automatic loading film system, automatic alignment accuracy of 0.25 microns, distortion error of 0.25 microns, illumination uniformity error of 4%. Like the previous generation 140, the system still uses a 1: 1 optical projection system. During exposure, the mask pattern is quickly photocopied on the photoresist-coated silicon wafer in a single scan. In normal conditions