【摘 要】
：
A set of a-SiOx :H (0.52 ＜x＜1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250℃. The micr
【机 构】
：
State Laboratory for Surface Physics,State Laboratory of Superlattices and Microstructures
【基金项目】
：
国家重点基础研究发展计划(973计划);国家自然科学基金
论文部分内容阅读
A set of a-SiOx :H (0.52 ＜x＜1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250℃. The microstructure andlocal bonding configurations of the films are investigated in detail using micro-Raman scattering,X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). It isfound that the films are structural inhomogeneous, with five phases of Si, Si2O:H, SiO:H, Si2O3:Hand SiO2 that coexist. The phase of Si is composed of nonhydrogenated amorphous silicon (a-Si)clusters that are spatially isolated. The average size of the clusters decreases with the increasingoxygen concentration x in the films. The results indicate that the structure of the present films canbe described by a multi-shell model, which suggests that a-Si cluster is surrounded in turn by thesubshells of Si2O:H, SiO:H, Si2O3:H, and SiO2.
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