Microstructure of a-SiOx:H

来源 :中国科学：数学英文版 | 被引量 : 0次 | 上传用户：chen90245

【摘要】

：

A set of a-SiOx :H (0.52 ＜x＜1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250℃. The micr

【作者】

：

WANG Yongqian(王永谦) LlAO Xianbo

【机构】

：

StateLaboratoryforSurfacePhysics

【出处】

：

中国科学：数学英文版

【发表日期】

：

2002年10期

【关键词】

：

a-SiOx: H microstructure BONDING configuration. a-SiOx: H microstructure bondi

【基金项目】

：

This work was supported by the National Natural Science Foundation of China (Grant Nos.69976028,29890217)and the State Key Development Program of Basic Research of China (Grant No.2000028201).

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A set of a-SiOx :H (0.52 ＜x＜1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250℃. The microstructure andlocal bonding configurations of the films are investigated in detail using micro

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Microstructure of a-SiOx:H

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