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X-ray photoelectron spectroscopy(XPS), ultraviolet photoelectron spec-troscopy (UPS) and high resolution electron energy loss spectroscopy (HREELS)are used to s tudy aluminum deposition on the GaP(111) surface prepared by ioa sputtering followed by thermal annealing. Because of the very limited thickness of Al overlayer, only the initial stage of Al/GaP (111) interface formation is investigated. At this stage, a Ga/Al replce-ment reaction has already been induced, forming an AIP overlayer covered with segragated Ga atoms. The interband transition of 1.7eV found on the clean GaP(l11) surface is removed, Evidences on the changes of valence band structure are studied and discussed carefully.
X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spec-troscopy (UPS) and high resolution electron energy loss spectroscopy (HREELS) are used to find aluminum deposition on the GaP (111) surface prepared by ioa sputtering followed by thermal annealing. Because this very limited thickness of Al overlayer, only the initial stage of Al / GaP (111) interface formation is investigated. At this stage, a Ga / Al replce-ment reaction has been induced, forming an AIP overlayer covered with segragated Ga atoms. The interband transition of 1.7eV found on the clean GaP (l11) surface is removed, Evidences on the changes of valence band structure are studied and discussed carefully.