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以2,4-乙酰丙酮化镁为前驱体,衬底温度为480℃,采用MOCVD工艺,分别在玻璃、氧化铝陶瓷、单晶Si(111)和Si(100)衬底上生长了取向生长的氧化镁薄膜。X射线衍射结果表明,无论是采用玻璃、氧化铝、单晶Si(111)和Si(100)衬底,氧化镁薄膜都是沿着(100)晶面取向生长。通过扫描电镜观察得到,在单晶Si(100)衬底上生长的氧化镁薄膜表面平整致密。模拟卢瑟福背散射结果显示,沉积时间超过70min时,界面处发生硅向氧化镁层少量扩散现象。
Using 2,4-acetylacetonate as precursor and a substrate temperature of 480 ℃, MOCVD was used to grow oriented growth on glass, alumina ceramics, Si (111) and Si (100) substrates respectively Of magnesium oxide film. X-ray diffraction results show that the MgO thin films grow along the (100) crystal plane regardless of the glass, alumina, Si (111) and Si (100) substrates. The surface of the magnesium oxide thin film grown on the single crystal Si (100) substrate is flat and dense by scanning electron microscopy. The simulated Rutherford backscattering results show that when the deposition time exceeds 70 min, a small amount of diffusion of silicon into the MgO layer occurs at the interface.