介绍了5.2kV高压绝缘栅双极型晶体管(HV IGBTs)的成功串联应用。穿通型HV IGBT串联应用时要完全控制感应过电压,最大的障碍是拖尾电流的关断问题。可以证明,采用先进的电压箝位技术能够限制因关断拖尾电流而引起的第二个电压尖峰。阳极采用载流子寿命局部分布的IGBT很适合这种应用;拖尾电流间隔时间越短,关断损耗越小。文中集中讨论了穿通型HV IGBT器件串联时的最佳通态等离子体分布,HV IGBT的最新发展趋势似乎与讨论结论相一致。未来先进的HV IGBT技术可完全减轻第一代HV IGBT串联时的困难。 The successful series application of 5.2kV high voltage insulated gate bipolar transistors (HV IGBTs) is presented. Through-type HV IGBT series applications to fully control the induced over-voltage, the biggest obstacle is the shutdown of the tail current. It can be demonstrated that the use of advanced voltage clamping technology can limit the second voltage spike due to the shutdown of the tail current. Anodes with locally distributed IGBT lifetime are well suited for this application; the shorter the tail current interval, the lower the turn-off losses. This paper focuses on the best on-state plasma distribution of through-type HV IGBT devices in series. The latest trend of HV IGBT seems to be consistent with the conclusion of the discussion. The future of advanced HV IGBT technology can completely reduce the first generation HV IGBT series difficulties.