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我们用ＰＥＣＶＤ方法制备出ＳｎＯ_２薄膜，透射电镜ＴＥＭ分析表明沉积温度由高到低时，ＳｎＯ_２膜从多晶态转变为非晶态，并且其电阻率随之增加；沉积时氧气流量增加时，ＳｎＯ_２的电阻率增加。
SnO2 thin films were prepared by PECVD. Transmission electron microscopy TEM analysis showed that the SnO2 films changed from polycrystalline to amorphous when the deposition temperature was high, and the resistivity increased. The resistivity increases.