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利用1.5 Me V Dynamitron电子加速器,在常温常压下通过改变电子注量和注量率等辐射参数对双极型开关晶体管晶圆芯片进行辐照处理,在厌氧条件下进行了不同温度不同气氛的退火实验,研究了不同辐照条件和退火工艺对器件击穿特性的影响,并对不同生产厂家的产品辐照结果进行了比较。结果表明:电子辐照可将晶体管的V(BR)CEO提高约30 V,对V(BR)CBO影响较小,辐照后的器件在200℃以下击穿电压热稳定性好,满足贴片封装及高温贮存实验要求,辐照工艺可作为V(BR)CEO不合格芯片的一种补救方法。并在理论上对辐照效应进行了讨论和分析。
A 1.5 Me V Dynamitron electron accelerator was used to irradiate the bipolar switching transistor wafer by changing the radiation parameters such as electron fluence and fluence rate under atmospheric pressure at different temperatures and atmospheres under anaerobic conditions The effects of different irradiation conditions and annealing process on the breakdown characteristics of the devices were studied. The irradiation results of different manufacturers were compared. The results show that the electron irradiation can improve the V (BR) CEO of the transistor by about 30 V, which has a small effect on the V (BR) CBO. The irradiated device shows good thermal stability at breakdown voltage below 200 ℃, Packaging and high temperature storage requirements of the experiment, the irradiation process can be used as V (BR) CEO failed a remedy chip. In theory, the radiation effects are discussed and analyzed.