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采用新颖的熔体旋甩结合放电等离子烧结技术制备了单相InSb化合物,研究了熔体旋甩工艺对其微结构以及热电性能的影响.结果表明,熔体旋甩得到的薄带自由面主要由300nm—2μm的小柱状晶组成,薄带接触面为非晶或精细纳米晶,薄带经烧结后得到了具有大量层状精细纳米结构的致密块体,尺寸约为40nm.与熔融+放电等离子体烧结制备样品相比,在测试温度范围内(300—700K),试样的电导率略有下降,但Seebeck系数显著增加,热导率和晶格热导率显著降低,室温下晶格热导率降低幅度约为10.6%,700K下晶格热导率的降低幅度达16.64%,熔融+熔体旋甩+放电等离子体烧结制备的InSb化合物试样在700K时其最大ZT值达到0.49,与熔融+放电等离子体烧结试样相比提高了29%.
Single-phase InSb compounds were prepared by a novel melt-spinning combined with spark plasma sintering technique and their effects on the microstructure and thermoelectric properties were investigated. The results show that the freedoms Composed of small columnar crystals of 300nm-2μm, the contact surface of the ribbons is amorphous or fine nanocrystal, the dense tapes with a large number of layered fine nanostructures are obtained after sintering, the size is about 40nm. Compared with the samples prepared by plasma sintering, the conductivities of the samples decreased slightly in the temperature range of 300-700K, but the Seebeck coefficient increased significantly, the thermal conductivity and lattice thermal conductivity decreased significantly, The thermal conductivity decreases by about 10.6% and the thermal conductivity decreases by 16.64% at 700K. The maximum ZT value of InSb compound prepared by melting + melt spinning + spark plasma sintering reaches 0.49 , An increase of 29% compared to the melt + discharge plasma sintered samples.