在英国用MOVPE(金属有机汽相外延)法生长红外探测器用的Cd_xHg_(1-x)Te已研究了将近十年。首次报导采用MOVPE法生长碲镉汞是在1981年,随后取得了一系列的重大进展,诸如IPM(互扩散多层工艺),在选择衬底上生长、选择烃基碲tellurium alkyls)以及由少数人命名的光-MOVPE。目前、英国人认为MOVPE在降低生长温度、生长多层结构及控制掺杂方面可取代块状或液相外延生长碲镉汞 Cd_xHg_ (1-x) Te for growing infrared detectors by the MOVPE (metal organic vapor phase epitaxy) method in the UK has been studied for almost a decade. The first reported growth of HgCdTe by MOVPE was followed in 1981 by a series of major advances such as IPM (Interdiffusion Multilayer Process), growth on select substrates, selection of tellurium alkyls, Named light-Movpe. At present, the British believe that MOVPE can replace massive or liquid-phase epitaxial growth of HgCdTe in reducing growth temperature, growing multilayer structure and controlling doping