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利用有限元方法对炉内的动量和热量传递过程进行了全局数值模拟,研究了硅单晶Czochral-ski(Cz)法生长时的总体传热和流动特性.假定熔体和气相中的流动都为准稳态轴对称层流,熔体为不可压缩流体,Cz炉外壁温度维持恒定,模拟结果表明:熔体流型及炉内传热特性与Marangoni效应密切相关,设置在晶体和坩埚间的气体导板能降低加热器的功率并改变熔体流型.
The momentum and heat transfer processes in the furnace were numerically simulated by finite element method (FEM), and the overall heat transfer and flow characteristics during Czochral-ski (Cz) growth of silicon single crystal were investigated. For the quasi-steady axisymmetric laminar flow, the melt is an incompressible fluid, and the temperature of the outer wall of the Cz furnace is kept constant. The simulation results show that the melt flow pattern and the heat transfer in the furnace are closely related to the Marangoni effect and are arranged between the crystal and the crucible Gas guides reduce the power of the heater and change the melt flow pattern.