离子注入和硅栅是目前用来提高金属—氧化物—半导体场效应晶体管和集成电路性能的两种方法。日本日立公司将这两种方法结合起来以提高集成电路的性能。美帝在离子注入金属—氧化物—半导体集成电路的研制中采用了这两种方法。美帝休斯飞机公司用铝栅作为自排列源区和漏区注入的掩模。实际上,离子注入仅仅产生预扩散源区和漏区的小的延展。注入区的宽度比晶体管铝栅对位调准的公差通常稍宽些。 Ion implantation and silicon gates are the two methods currently used to improve the performance of metal-oxide-semiconductor field-effect transistors and integrated circuits. Hitachi, Japan, combines these two approaches to improve the performance of integrated circuits. US imperialism in the ion-implanted metal-oxide-semiconductor integrated circuits used in the development of these two methods. The U. S. Hughes Aircraft Company uses an aluminum grid as a mask for self-aligned source and drain regions. In fact, ion implantation only produces a small spread of pre-diffused source and drain regions. The width of the implanted region is usually slightly wider than the tolerance of the Al-gate alignment of the transistor.