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高剂量As注入Si的样品,经红外瞬态辐照退火能获得亚稳态载流子浓度(体浓度可高达6×10~(20)cm~(-3)),明显超过800℃时热平衡条件下As在Si中的固溶度值(1.9×10~(10~(20)cm~(-3)).红外瞬态退火后再进行不同温度(室温-800℃)的后热处理,发现在处理温度390℃以上时,激活的杂质浓度随着时间加长而显著下降.本文报道上述失活现象的实验研究结果(霍耳效应测试和阳极氧化剥层技术、TEM、RBS随机谱、沟道谱和沟道产额角分布等实验结果),通过对这些实验的综合分析,讨论了激活As原子的失活机理.
The samples with high dose of As injected into Si could be metastable at infrared ray irradiation, and the metastable carrier concentration could reach as high as 6 × 10 ~ (20) cm ~ (-3) (1.9 × 10 ~ (10 ~ (20) cm ~ (-3))) of As in Si were investigated.The results show that after the thermal annealing at infrared, the post-heat treatment of different temperature (room temperature -800 ℃) When the temperature is above 390 ℃, the concentration of activated impurities decreases significantly with the increase of time.The experimental results of the deactivation (Hall effect test and anodic oxidation delamination, TEM, RBS random spectrum, channel Spectrum and channel angle distribution of the experimental results), through a comprehensive analysis of these experiments to discuss the activation of As atoms inactivation mechanism.