美国推出一种制造GaAs圆片新工艺——垂直布里奇曼工艺(VB)。该方法起初用于发光二极管、固态激光器和太阳能电池等光电器件。后来进一步推广应用至数字IC、模拟IC和光电IC。最近应用于制造GaAs圆片。与其它制造方法比较,该方法具有制造大直径材料的能力,制造出来的圆片在质量的均匀性方面都有明显的提高。该方法具备目前制造 The United States introduced a new manufacturing GaAs wafer technology - vertical Bridgman process (VB). The method was initially used for optoelectronic devices such as light-emitting diodes, solid-state lasers and solar cells. Later further promote the application to digital IC, analog IC and photoelectric IC. Recently used in the manufacture of GaAs wafer. Compared with other manufacturing methods, this method has the ability to manufacture large diameter materials, and the manufactured wafers have a significant improvement in the quality uniformity. This method is currently manufactured