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一、概述磁敏电阻(Magnotoresor)是一种基于磁阻效应而制作的电阻体。它在外施磁场的作用下(包括外施磁场的强度及方向的变化)能够改变自身的阻值,是一种新颖的传感元件。它可分为半导体磁敏电阻及强磁性金属薄膜磁敏电阻两大类。半导体磁敏电阻的研制始于60年代初,在这方面联邦德国西门子公司较为权威,继而是日、美、苏、西欧等国。在60年代中期即有商品销售,因其和普通电阻一样,具有两个端子、结构简单、灵敏度高、安装方便等优点,其应用较为普遍。我国电子工业部某所在1974～1976年间,曾组织过半导体磁敏电阻的研制与应用。强磁性金属薄膜磁敏电阻是用强磁性合金材料制成的一种薄膜型的磁敏电阻器件,其作用原理是强磁性体的磁阻效应,它和半导体磁敏电阻不同,除对磁场
I. Overview Magotoresor (Magotoresor) is based on the magnetoresistance effect of the resistor made. It exerts a magnetic field (including the external magnetic field intensity and direction changes) can change its resistance, is a novel sensor. It can be divided into semiconductor magnetoresistive and ferromagnetic metal film magnetoresistive two categories. Development of semiconductor magnetoresistive resistor began in the early 60s, in this regard the Federal Republic of Germany Siemens more authoritative, followed by Japan, the United States, the Soviet Union, Western Europe and other countries. In the mid-1960s that is, sales of goods, as with ordinary resistance, with two terminals, simple structure, high sensitivity, easy installation, etc., its application is more common. Somewhere between 1974 and 1976, China’s Ministry of Electronics Industry has organized the development and application of semiconductor magnetoresistor. Ferromagnetic metal thin film magnetoresistive resistor is made of ferromagnetic alloy material of a thin-film magnetoresistive device, its principle of action is the magnetoresistance of ferromagnetic effect, which is different from the semiconductor magnetic resistance, in addition to the magnetic field