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GLSI多层铜互连线的平坦化中,抛光液中的SiO2磨料对铜的平坦化效率具有重要的作用。研究了碱性纳米SiO2质量分数对300 mm铜去除速率和300 mm铜布线平坦化作用的影响。结果表明,随着磨料质量分数的增大,铜的去除速率增大,晶圆的均匀性变好,但磨料质量分数过高时,铜的去除速率略有降低,可能由于纳米SiO2表面硅羟基吸附在金属铜表面,导致质量传递作用变弱,引起速率降低。通过对图形片平坦化实验研究表明,随着磨料质量分数的增大,平坦化能力增强,这是因为磨料的质量分数增大使得高低速率差增大,能够有效消除高低差,实现平坦化。
In the planarization of GLSI multilayer copper interconnects, the SiO2 abrasive in the polishing solution plays an important role in the planarization efficiency of copper. The effect of basic nano-SiO2 mass fraction on copper removal rate of 300 mm and planarization of 300 mm copper wire was studied. The results show that with the increase of the mass fraction of abrasive, the removal rate of copper increases and the uniformity of the wafer becomes better. However, the removal rate of copper decreases slightly when the abrasive mass fraction is too high, which may be due to the silanol groups Adsorption on the metal copper surface, resulting in weakening the role of mass transfer, causing the rate of decline. The experimental research on the flattening of the graphic tablet shows that the flattening ability increases with the increase of the abrasive mass fraction, which is because the increase of the mass fraction of the abrasive increases the difference between the high and the low, which can effectively eliminate the height difference and achieve the flattening.