论文部分内容阅读
使用深掺杂方法在Si材料中掺入Au原子后，其电阻率随温度T的变化关系从主要依赖于T－3/2项的浅掺杂材料变成主要依赖于exp(－E/KT)项的深掺杂材料，从而大幅度地提高了掺金Si材料对温度的敏感性。这样在理论上深掺杂Si材料比浅掺杂Si材料对温度的敏感性提高了约1000倍。对于深掺杂方法制成的微型流量传感器特性的测量证明了以上理论。深掺杂Si材料的应用不但大大提高了微型流量传感器的灵敏度，也大幅度地降低了响应时间。
Using deep doping method to incorporate Au atoms in Si material, the resistivity changes with the temperature T from the shallow doping material which mainly depends on the T-3/2 term and mainly depends on exp (-E / KT ) Of the deep-doped material, thus greatly improving the sensitivity of the gold-doped Si material temperature. In theory, the sensitivity of deep-doped Si material to shallow-doped Si material is about 1000 times higher than that of Si. The measurement of the characteristics of the miniature flow sensor made of deep doping method proves the above theory. The application of deep-doped Si material not only greatly enhances the sensitivity of the miniature flow sensor, but also greatly reduces the response time.