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利用扫描隧道显微镜（ＳＴＭ）系统地研究了Ｃ６０薄膜在ＧａＡｓ（００１）表面的异质外延生长．在ＧａＡｓ（００１）２×４β相表面，观察到Ｃ６０薄膜以非密排面进行生长，并在生长中有结构相变产生．实验数据表明，薄膜下层面心立方（ｆｃｃ）的晶格常数比Ｃ６０晶体的晶格常数要大１３％；而薄膜的表层结构则展示了非理想的六角密堆（ｈｃｐ）结构，其表面为ｈｃｐ（１１００）面，生长过程是非理想的层状生长模式．在ＧａＡｓ（００１）ｃ（４×４）衬底上，Ｃ６０薄膜的表面仍然是ｆｃｃ（１１１）面，其结构参数与Ｃ６０晶体一致，但Ｃ６０薄膜采用了三维模式进行生长
The heteroepitaxial growth on the GaAs (001) surface of C60 thin films was investigated systematically by scanning tunneling microscope (STM). On the surface of GaAs (001) 2 × 4β phase, C60 films were observed to grow on non-dense surfaces, and structural phase transitions occurred during growth. Experimental data show that the lattice constant of the fcc in the lower layer of the film is 13% larger than that of the C60 crystal, while the surface structure of the film shows a non-ideal hexagonal close-packed structure with a surface of hcp (1100) surface, the growth process is not ideal lamellar growth mode. On the GaAs (001) c (4 × 4) substrate, the surface of the C60 thin film is still the fcc (111) plane, and the structural parameters are consistent with the C60 crystal. However, the C60 thin film adopts a three-dimensional pattern