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介绍了一种具有高阈值电压和大栅压摆幅的常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管。采用原子层淀积(ALD)方法实现Al_2O_3栅介质的沉积。槽栅常关型AlGaN/GaN MOS-HEMT的栅长(Lg)为2μm,栅宽(Wg)为0.9 mm(0.45 mm×2),栅极和源极(Lgs)之间的距离为5μm,栅极和漏极(Lgd)之间的距离为10μm。在栅压为-20 V时,槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电仅为0.65 nA。在栅压为+12 V时,槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电为225 nA。器件的栅压摆幅为-20~+12V。在栅压V_(gs)=+10 V时,槽栅常关型AlGaN/GaN MOS-HEMT电流和饱和电流密度分别达到了98 mA和108 mA/mm(Wg=0.9 mm),特征导通电阻为4 mΩ·cm2。槽栅常关型AlGaN/GaN MOS-HEMT的阈值电压为+4.6 V,开启与关断电流比达到了5×108。当V_(ds)=7 V时,器件的峰值跨导为42 mS/mm(Wg=0.9 mm,V_(gs)=+10 V)。在V_(gs)=0 V时,栅漏间距为10μm的槽栅常关型AlGaN/GaN MOS-HEMT的关断击穿电压为450 V,关断泄露电流为0.025 mA/mm。
A normally-off trench gate AlGaN / GaN metal oxide semiconductor high electron mobility transistor with high threshold voltage and large gate voltage swing is introduced. Al_2O_3 gate dielectric deposition is realized by atomic layer deposition (ALD) method. The gate length (Lg) of the gate-on AlGaN / GaN MOS-HEMT is 2 μm, the gate width is 0.9 mm (0.45 mm × 2), the distance between the gate and the source (Lgs) is 5 μm, The distance between the gate and the drain (Lgd) is 10 μm. Gate-to-gate AlGaN / GaN MOS-HEMT has a gate leakage of only 0.65 nA at a gate voltage of -20 V. Gate-to-gate AlGaN / GaN MOS-HEMT has a gate leakage of 225 nA at a gate voltage of +12 V. The device’s gate voltage swing is -20 ~ + 12V. At gate voltage V gs = + 10V, the current and saturation current density of the gate-off AlGaN / GaN MOS-HEMT reaches 98 mA and 108 mA / mm (Wg = 0.9 mm) 4 mΩ · cm2. The threshold voltage of gate-normally-on AlGaN / GaN MOS-HEMT is +4.6 V, and the on-off current ratio reaches 5 × 108. The peak transconductance of the device is 42 mS / mm (Wg = 0.9 mm, V gs = + 10 V) when V ds = 7 V. The gate-on-gate AlGaN / GaN MOS-HEMT with gate-drain spacing of 10μm has a turn-off breakdown voltage of 450 V and a turn-off leakage current of 0.025 mA / mm at Vgs = 0V.