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将能量为1.5MeV,剂量分别为1.5×10~(15)cm~(-2)和7.5×10~(15)cm~(-2)的磷离子注入<100>硅单晶,经1050℃,20s退火形成导电埋层,在500—4000cm~(-1)波数范围的红外反射谱中,观测到由自由载流子等离子体效应所致的干涉现象,在分析高能离子注入体系和自由载流子等离子体效应光学响应的特征基础上,通过计算机模拟红外反射谱,建立了深导电埋层的光学表征方法,应用这种表征方法,获得了导电埋层中的载流子分布、迁移率和高能注入离子的电激活率,模拟计算结果表明红外反射谱对载流子分布形状和模型中参量是敏感的,模拟计算的准确程度是高的,进行了模拟计算的结果与实验结果的比较。
The <100> silicon single crystals were implanted with phosphorus ions with energies of 1.5MeV, 1.5 × 10 ~ (15) cm ~ (-2) and 7.5 × 10 ~ (15) cm ~ , 20s annealed to form the conductive buried layer. In the infrared reflection spectrum in the wave number range of 500-4000cm -1, the interference phenomenon caused by the free-carrier plasma effect was observed. After analyzing the relationship between the high-energy ion implantation system and the free-load Based on the characteristics of the optical response of the plasma plasma effect, the optical characterization method of the deep conductive buried layer was established by computer simulation of the infrared reflection spectrum. By using this characterization method, the carrier distribution and the mobility in the conductive buried layer were obtained. And the electric activation energy of high-energy implanted ions. The simulation results show that the infrared reflectance spectrum is sensitive to the carrier distribution shape and the parameters in the model, and the accuracy of the simulation calculation is high. The simulation results are compared with the experimental results .