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由于InP单晶材料在微波器件和光电器件等方面的应用,使InP单晶得到迅速的发展。英国MR公司利用LEC方法已生产出φ80mm,重3Kg的InP单晶。yasuo Seki等人利用杂质钉扎效应已拉出重掺(Zn,s)低位错和无位错InP单晶。国内近几年,在多晶合成和单晶制备等方面也取得较大进展。本实验采用L4316Ⅱ/ZF型高压单晶炉,对掺Sn-InP单晶进行了研制。在φ60mm的石英坩埚中,装100—130克InP多晶和45克B_2O_3,掺0.1%重量的Sn。拉晶时炉内压力
As InP single crystal materials in microwave devices and optoelectronic devices and other aspects of the InP single crystal has been rapid development. British MR company has produced by LEC method φ80mm, weight 3Kg InP single crystal. Yasuo Seki and others exploited the impurity pinning effect to pull out heavily doped (Zn, s) low dislocations and dislocation-free InP single crystals. In recent years, great progress has been made in the field of polycrystalline synthesis and single crystal preparation. In this experiment, L4316Ⅱ / ZF high-pressure single crystal furnace was used to develop Sn-InP single crystal. In a φ60 mm quartz crucible, 100-130 g InP polycrystal and 45 g B 2 O 3 were mixed with 0.1 wt% Sn. When pulling crystal furnace pressure