We propose diamond-like carbon(DLC)as the resistance change material for nonvolatile memory applications.Nanoscale DLC films are prepared by filtered cathodic vacuum arc technique and integrated to W/DLC/W structure devices.The deposited DLC film has a thickness of about 2O nm and high sp3 fraction content.Reversible bistable resistive switching from a high resistance state to a low resistance state,and vice versa,is observed under appropriate unipolar stimulation pulses.