在采用Si-玻璃阳极键合技术制备微惯性传感器的过程中,实验发现键合圆片中心区域键合失效。通过对键合机理和工艺过程进行分析,认为湿法腐蚀工艺引入钾离子(K+)污染是造成键合失效的主要原因,也可以对键合失效现象给出合理的解释。改变工艺参数进行了键合对比实验,结果表明,未受K+污染的键合圆片没有发生键合失效现象。提出了解决键合失效问题的两种方案,并首次提出在Si片表面生长氧化层提高失效区键合强度的方法;从理论上分析了增加SiO2介质层的可行性。强度测试结果表明,在SiO2厚度为150nm时,键合剪切强度达到14MPa,验证了方案的可靠性。利用上述方法制备出微加速度传感器敏感结构。 In the preparation of micro-inertial sensors using Si-glass anodic bonding technology, the experiment found that bonding the central bond failure area. Based on the analysis of bonding mechanism and process, it is considered that the introduction of potassium ion (K +) pollution in the wet etching process is the main reason for the bond failure, and a reasonable explanation for the bonding failure can also be given. Changing the process parameters of the bonding comparison experiments showed that the bonding wafer without K + pollution did not occur bond failure phenomenon. Two schemes are proposed to solve the bond failure problem. The method of growing oxide layer on the surface of Si wafer to improve the bond strength in the failure area is proposed for the first time. The feasibility of adding SiO2 dielectric layer is theoretically analyzed. The results of strength test show that the bonding shear strength reaches 14MPa when the SiO2 thickness is 150nm, which verifies the reliability of the scheme. Sensitive structure of micro-acceleration sensor is prepared by the above method.