Due to the coupling of piezoelectric and semiconducting dual properties,much attention has been focused on the piezoelectric semiconductor materials,such as ZnO
Step-stress experiments are performed in this paper to investigate the degradation mechanism of an AlGaN/GaN high electron mobility transistor(HEMT).It is found
A novel transformer-type variable inductor is proposed to achieve a wide tuning range at frequencies as high as K band.The variable inductor is designed,and an