KOH处理对ZnO纳米棒阵列结构及光电性能的影响(英文)

来源 :Transactions of Nonferrous Metals Society of China | 被引量 : 0次 | 上传用户:ypengw
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采用简单的化学沉积结合KOH碱刻蚀的方法,在导电玻璃(FTO)上生长ZnO纳米棒阵列(ZnONRs)。用X射线衍射(XRD)、扫描电子显微镜(SEM)、电流—电压(I—V)曲线对所得样品的晶型、形貌及光电性能进行测试,结果表明:ZnONRs呈纤铅矿型;ZnONRs的形貌及光电性能与KOH的浓度及刻蚀时间密切相关,经0.1mol/LKOH刻蚀1h后可得到排列高度有序且分布均匀的ZnONRs;KOH刻蚀后的ZnONRs与未刻蚀前高密度的ZnONRs相比,其光学性能得到提高。0.1mol/LKOH刻蚀1h的ZnONRs作为太阳能电池的光阳极,其光电转换效率、短路电流、开路电压较未刻蚀的ZnONRs分别提高了0.71%、2.79mA和0.03V。 ZnO nanorod arrays (ZnONRs) were grown on conductive glass (FTO) using a simple chemical deposition combined with KOH alkali etching. The crystal structure, morphology and optical properties of the obtained samples were tested by X-ray diffraction (XRD), scanning electron microscopy (SEM) and current-voltage (I-V) curves. The morphology and optical properties are closely related to the KOH concentration and etching time. Highly ordered and uniformly distributed ZnONRs are obtained after 0.1mol / L KOH etching for 1h. The KOH-etched ZnONRs are similar to those before etching Compared with the density of ZnONRs, its optical properties are improved. The photoelectron conversion efficiency, short circuit current and open circuit voltage of ZnONRs with 0.1mol / L KOH for 1h as the photoanode of solar cell increased by 0.71%, 2.79mA and 0.03V, respectively.
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