论文部分内容阅读
采用超低压(22×102Pa)选择区域生长(selective area growth,SAG)金属有机化学气相沉积(metal_organic chemical vapor deposition,MOCVD)技术成功制备了InGaAsP/InGaAsP级联电吸收调制器(electro absorption modulator,EAM)与分布反馈激光器(distributed feed backlaser,DFB)单片集成光源的新型光电器件.实验结果表明,采用该技术制备的器件具有良好的性能:激射阈值为19mA,出光功率为4·5mW,在5V的驱动电压下达到了20dB的消光比,器件3dB响应带宽达到了10GHz以上.应用这种新型器件,利用级联EAM的光开关效应,获得了重复率为10GHz、半高宽(full_width_at_half_maximum,FWHM)为13·7ps的超短光脉冲.
An InGaAsP / InGaAsP cascade electro absorption modulator (EAM) was successfully fabricated by ultra-low pressure (22 × 102Pa) selective area growth (SAG) metalorganic chemical vapor deposition ) And distributed feed backlaser (DFB). The experimental results show that the device prepared by this technique has good performance: the lasing threshold is 19mA, the output power is 4.5 mW, 5V, the 3dB response bandwidth of the device reaches more than 10GHz.Using the optical switch effect of cascaded EAM, we obtain the full-width_at_half_maximum (FWHM) repetition rate of 10GHz, 13.7ps ultra-short light pulse.