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日本红外线工业公司(NiiC),研制出一种测定半导体薄膜厚度的仪器,即椭圆仪(图1) 与以往最多只能测4层,而且只能测吸收系数为0的薄膜的仪器相比,这种椭圆仪可测定直到10层薄膜,并可测定具有吸收性的材料。这种椭圆仪是将一束偏振光入射到物体表面,依据其反射光偏振状态的变化来测定物体本身的光学性质以及物体表面薄膜的膜厚和其他光学性质的
Nippon Infrared Industries (NiiC), developed a measure of semiconductor film thickness of the instrument, the ellipsometer (Figure 1) compared with the past can only measure 4 layers, and can only measure the absorption coefficient of 0 thin film equipment, The ellipsometer measures up to 10 layers of film and determines the absorbency of the material. This elliptic instrument is a beam of polarized light incident on the surface of the object, according to its reflected light polarization state changes to determine the optical properties of the object itself and the film thickness and other optical properties of the surface of the object